Properties of semiconductor wafers.

Material	Type	Doping	Surface orientation	Resistivity (Ω cm)	Dopant concentration (atoms per cm3)
Si	n-Type	Phosphorus	(100)	0.001–0.005	1 × 1019–8 × 1019 a
				0.08–0.5	1 × 1016–1 × 1017 a
				1–10	3 × 1014–4 × 1015
				10–20	2 × 1014–3 × 1014
Si	p-Type	Boron	(100)	0.001–0.005	3 × 1019–1 × 1020
				0.005–0.1	3 × 1017–2 × 1019a
				1–10	1 × 1015–1 × 1016
				10–20	7 × 1014–1 × 1015
Si	Undoped	Undoped	(100)	>10 000	Not specified
Si	n-Type	Arsenic	(100)	0.001–0.005	1 × 1019–7 × 1019
		Antimony	(100)	0.003–0.004	1 × 1019–2 × 1019

^aNot provided by manufacturer. Dopant concentration is approximated using the PV lighthouse resistivity calculator at T = 300 K.²⁴