. 2023 Aug 22;15(34):40709–40718. doi: 10.1021/acsami.3c04808

Table 2. Extracted Parameters from the Transfer Characteristics of the hBN-Passivated Single Nanowire-Based Device at a V_DS of 0.5 V Using Different Gating Schemes.

parameter	carrier type	back gate (without hBN)	back gate (with hBN)	top gate (with hBN)
I_ON (A)	n	5.8 × 10^–⁹	2.4 × 10^–⁹	5.7 × 10^–⁹
	p	8.4 × 10^–⁹	1.8 × 10^–⁸	2.6 × 10^–⁸
I_OFF (A)	n	7.8 × 10^–¹⁶	7.6 × 10^–¹⁶	8.4 × 10^–¹⁶
	p	8.2 × 10^–¹⁶	1.2 × 10^–¹⁵	8.4 × 10^–¹⁶
I_ON/I_OFF ratio	n	∼10⁷	∼10⁷	∼10⁷
	p	∼10⁷	∼10⁷	∼10⁸
hysteresis (V)	n	13	6.2	2.4
	p	28	13.5	6.8

Table 2. Extracted Parameters from the Transfer Characteristics of the hBN-Passivated Single Nanowire-Based Device at a VDS of 0.5 V Using Different Gating Schemes.