Table 3. SS Values of hBN-Passivated Nanowire Array-Based Devices Using Different Gating Schemes.
SS (V/dec) | |||
---|---|---|---|
carrier type | back-gate (without hBN) | back-gate (with hBN) | top-gate (with hBN) |
n | 2.56 | 1.76 | 3.05 |
p | 5 | 3.06 | 1.5 |
SS (V/dec) | |||
---|---|---|---|
carrier type | back-gate (without hBN) | back-gate (with hBN) | top-gate (with hBN) |
n | 2.56 | 1.76 | 3.05 |
p | 5 | 3.06 | 1.5 |