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. 2023 Aug 22;15(34):40709–40718. doi: 10.1021/acsami.3c04808

Table 3. SS Values of hBN-Passivated Nanowire Array-Based Devices Using Different Gating Schemes.

SS (V/dec)
carrier type back-gate (without hBN) back-gate (with hBN) top-gate (with hBN)
n 2.56 1.76 3.05
p 5 3.06 1.5