Table 4. Extracted Parameters from the Transfer Characteristics of the hBN-Passivated Nanowire Array-Based Device at a V_DS of 0.5 V Using Different Gating Schemes.

parameter	carrier type	back gate (without hBN)	back gate (with hBN)	top gate (with hBN)
ION (A)	n	6.4 × 10–7	6.8 × 10–7	8.0 × 10–10
	p	7.3 × 10–8	2.7 × 10–7	8.2 × 10–9
IOFF (A)	n	3.2 × 10–11	5.3 × 10–12	4.5 × 10–12
	p	3.2 × 10–11	5.3 × 10–12	4.5 × 10–12
ION/IOFF ratio	n	∼104	∼105	∼102
	p	∼103	∼105	∼103
hysteresis (V)	n	8	7.6	6.9
	p	16	11	4.2