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. 2023 Sep 2;14:5352. doi: 10.1038/s41467-023-40620-3

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© The Author(s) 2023

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — a Mass absorption coefficient of bulk PbS, PbS CQDs, Si, α-Se and CsPbBr₃ as a function of photon energy. b Current density–voltage curves of the PbS CQDs photodiode under dark and X-ray irradiation with 8.1 mGy_air s⁻¹ dose rates. c Photocurrent and sensitivity to X-ray varying with the dose rate at −1 V bias. d Transient response to X-ray under different dose rates at −1 V bias. e Transient response at various biases under 8.1 mGy_air s⁻¹ dose rates. f X-ray irradiation stability of PbS CQDs film.