Table 1.

Comparison of key parameters with previously reported optoelectronic memories

Working principle	Photosensitive material	Programming voltage	OPD [mW/cm2]	Programming time	Memory window	Tested retention time	Tested fatigue cycles	Ref.
Photochromic	DAEs	60 V	–	5 s	>105	500 days	70	10
Tunneling	MoS2	100 V	5 × 104	1 s	>107	104 s	70	18
Tunneling	SnS2	40 V	–	5 s	>104	–	–	1
Tunneling	PtS2	30 V	41	100 ms	>103	–	–	19
Defects	BTBT	120 V	40	12 s	>106	2 × 104 s	–	11
Defects	MoS2/PbS	40 V	0.027	5 s	<3	104 s	2000	12
Defects	WSe2	80 V	210	5 s	106	4.5 × 104 s	200	13
Defects	Penance	60 V	71.59	120 s	104	100 days	3	14
Defects	PDVT-10:N2200	40 V	5	1 s	105	2 × 104 s	500	15
Defects	MoS2	80 V	501	10 s	107	104 s	250	16
Defects	TiO2	50 V	1	30 s	<2	104 s	–	17
PSD	Ga2O3	4 V	0.16	1 s	>106	2.6 × 105 s	500	This work

OPD optical power density.