Table 6.
Target Oxo-anion | Technology Type | Adsorption Technology | Observed Selectivity | Selectivity Metric(s) | Mechanism(s) of Selectivity | References | |
---|---|---|---|---|---|---|---|
H2AsO4− | PLE | Cu(II)-PLE | As(V) ~ P > C > S | Electrostatic, HSAB | 24,79,117,179 | ||
Zr(VI)-PLE | As(V) ~ P > C ~ S | %R | Electrostatic, HSAB | 16,99 | |||
ZV-PLE | As(V) > S > N > P | %R | Hydrophobicity, sterics | 180 | |||
Cu(II)-chitosan | As(V) > P | , %R | Electrostatic, HSAB | 11,133,181 | |||
AE | WB-AE | S > As(V) > N | %I | Electrostatic, HSAB | 25 | ||
WB-AE | P > As(V) > S > N | %I | Electrostatic, hydrophobicity | 57 | |||
MOF | Fe(III)-MOF | As(V) > S ~ N > C | %R | Sterics | 175 | ||
SM-Zr(VI)-MOF | P ~ As(V) > Si > S > N | TL | Electrostatic | 182 | |||
LDH | Mg-Al LDH | P > As(V) > C ~ S > N | %I | Electrostatic, sterics | 173,174 | ||
H3AsO3 | MIP | MIP | As(III) > P > S > N | Kd, | Electrostatic, sterics | 126 | |
MIP | S > As(III) > Si ~ P > N | Kd, | Electrostatic, sterics | 183 | |||
HSeO3− | PLE | Cu(II)-PLE | Se(IV) > S | Electrostatic, HSAB | 117 | ||
Cu(II)-chitosan | Se(IV) > P | , %R | Electrostatics, sterics | 11 | |||
MMSi | MMSi | Se(IV) > S ~ N > P | %R | Electrostatics | 184 | ||
SeO42- | HBC | Mg(II)-HBC | S > Se(VI) > C | Hydrophobicity, sterics, electrostatic | 98 | ||
HCrO4− | PLE | ZVE-PLE | Cr(VI) > S > N > P | %R | Hydrophobicity, sterics | 180 | |
AE | SB-AE | Cr(VI) > S > N | Hydrophobicity, sterics, electrostatic | 110 | |||
MOF | Zr(VI)-MOF | Cr(VI) > S > N | K d , %R | Electrostatic, HSAB, sterics | 112,122 | ||
Co(II)-MOF | Cr(VI) > S ~ N | K d | Electrostatic, sterics | 177 | |||
Zn(II)-MOF | Cr(VI) > S ~ N | K d | Electrostatic, sterics | 177 | |||
Cd(II)-MOF | Cr(VI) > S > N | %R | Electrostatic, sterics | 178 | |||
Ag(I)-MOF | Cr(VI) > N > C | %R | Electrostatic, sterics | 176 | |||
SM-clay | SM-clay | Cr(VI) > N > S − | qr | Sterics | 172 | ||
MIP | MIP | Cr(VI) > S ~ N | Kd, | Sterics | 127 | ||
MIP | Cr(VI) > S > N | Kd, | Sterics | 185 | |||
MIP | Cr(VI) > S > P > N | Kd, | Sterics | 186,187 | |||
NMO-MIP | Cr(VI) > N > S > P | TL | Electrostatic, sterics | 188 | |||
SM-MCWNT | SM-MCWNT | Cr(VI) > C ~ P ~ N | %R | Electrostatic | 189 | ||
SM-activated C | SM-activated C | Cr(VI) > P > S > N | %I | Sterics | 190 |
Note: PLE is polymeric ligand exchanger, HSAB is hard-soft acid base principle, ZV is zero valent iron, SB-AE is a strong base anion exchanger, WB-AE is weak base anion exchanger, MOF is metal organic framework, LDH is layered double hydroxide, SM is surfactant modified, and MIP is molecularly imprinted polymer, MMSi is modified mesoporous silica, HBC is hydrogen bonding capsule, MCWNT is multi-walled carbon nanotube. is binary separation factor, %R is % removal, %I is % interference, TL is tolerance limit, Kd is distribution coefficient, is the selectivity coefficient, is energy of crystallization, qr is ratio of q the adsorption capacity.