Table 5. Electromagnetic characteristics of 50nm thick TiN (Titanium Nitride) inverted microstrip on sapphire with different dielectric layers, where _r is the relative dielectric constant, tan δ is the loss tangent, ρ is the resistivity, t _diel is the thickness of the dielectric, Ref. is the references, L _λ/2 is the half wavelength length, S ₂₁ is the insertion loss, SiO is silicon monoxide, SiO2 is silicon dioxide, and aSi is amorphous silicon. The total length used here to calculate the S ₂₁ is 70 wavelengths at 24 GHz.

	Inverted microstrip
	SiO	SiO 2	aSi
r	5.8	4.0	11.9
tan δ	0.004	3.0×10 −4	2.2×10 −5
ρ	∞	∞	15 kΩcm
t diel	100nm	100nm	200nm
Ref.	52	53
Width	1.95 μm	2.40 μm	1.88 μm
L λ/2	336 μm	400 μm	340 μm
S 21:10 GHz	–3.75 dB	–1.08 dB	–1.61 dB
S 21:30 GHz	–16.72 dB	–8.58 dB	–8.80 dB