Table 1.
Thin Film/Substrate | (YIG)Y3Fe5O12/ Gd3Ga5O12 (GGG) | Co25Fe75/ Si/SiO2 |
MgAl0.5Fe1.5O4/ MgAl2O4 |
|
---|---|---|---|---|
Parameters | ||||
Gilbert damping constant | α ≈ 6.7 × 10−5 | α ≈ 2.1 × 10−3 | α ≈ 1.5 × 10−3 | |
Magnon propagation length | Several cm | (21 ± 1) µm | (0.6–0.9) µm | |
Magnetostatic exchange length | ~17.6 nm | ~3.4 nm | ~20.5 nm | |
Thin film fabrication | Liquid phase epitaxy on single crystal (111) Gd3Ga5O12 with PbO-B2O3 flux 927 °C. |
Sputter deposited on Si/SiO2 substrates at ambient temperature. Polycrystalline films, no post-deposition processing required. |
Pulsed laser deposition at 450 °C on MAO substrates. Epitaxial growth required. | |
Challenges for magnonic applications | Growth is not CMOS compatible. Expensive substrates. |
Reduce extrinsic factors that increment the intrinsic damping parameter. | PLD fabrication is challenging to scale up. Alternative substrates. Low Ms. |