Figure 3.

Charge transport in GNR networks. (a) Schematic illustration of long-channel FETs (LCFETs) with the measurement circuit. The film of 9-AGNRs is encapsulated between h-BN (light green), placed on a graphite gate (dark gray), and contacted from the side by edge contacts (yellow) separated by a larger distance than the average 9-AGNR length, in the range of μm. We measured the I_DS upon application of V_DS and V_G. (b) Maps of I_DS as a function of V_DS and V_G recorded on device A at various temperatures (only 9, 150, and 300 K, shown here; see more details in Supporting Information Figure S16). (c) Transport characteristics of SCFET device 1 and LCFET device A as a function of V_G, recorded at 300 K (V_DS = 0.2 V). (d) Transport characteristics of device A at fixed V_DS = 1 V as a function of V_G, recorded at various temperatures. (e) Arrhenius plot of the conductance recorded from three different devices at V_DS = 0.4 V and V_G = −5 V as a function of 1/T. The inset is linear fittings within 300 to 100 K for these three different devices. (f) The temperature-dependent current–voltage characteristics at V_G = −5 V as scaled current I/T^α+1 versus scaled bias voltage eV/k_BT.