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. 2023 Oct 14;14:6481. doi: 10.1038/s41467-023-42019-6

Table 3.

Device characteristics of the vacuum-deposited TADF-sensitized OLEDs

Device Vona (V) Lmaxb (cd m−2) λmaxc (nm) CIEd (x, y) EQEmax/100/1000e (%) Δroll-offf (%) CEg (cd A−1) PEh (lm W−1) LT90i (h) LT50i (h)
1 3.4 10399 462 0.13, 0.10 5.1/4.2/3.4 33 4.6 4.1 - 19.7
2 3.4 10689 461 0.13, 0.09 5.0/4.2/3.4 32 4.3 3.8 - 27.3
3 2.5 31763 572 0.50, 0.50 19.5/14.2/3.8 81 70.4 80.2 12.3 -
4 2.6 30854 572 0.49, 0.50 20.9/12.8/3.4 84 75.1 82.9 15.4 -
5 2.6 29697 571 0.50, 0.50 16.5/13.1/3.5 79 59.9 64.8 19.1 -
6 2.5 30426 572 0.50, 0.50 18.5/15.1/3.6 81 67.7 76.9 23.4 -
7 2.7 22658 572 0.50, 0.50 15.2/10.2/2.2 86 56.3 58.0 1.1 -

aVon represents turn-on voltage.

bLmax represents maximum luminance.

cλmax represents peak maximum.

dCIE coordinates are taken at luminance of 100 cd m−2.

eEQEmax represents maximum external quantum efficiency.

fEfficiency roll-off measured by ∆roll-off = 1 − (EQE1000/EQEmax).

gCE represents maximum current efficiency.

hPE represents maximum power efficiency.

iOperational lifetime projected at 1000 cd m−2.