Table 1.
Popular material platforms for heterogeneous integrated chalcogenide photonics (adapted and modified from2,165)
| Aspect | Doped silica (Ge:SiO2) | Silicon nitride (SiN) | Silicon-on-insulator (SOI)a | Indium Phosphide (InP) | Lithium niobate (LN/LiNbO3) |
|---|---|---|---|---|---|
| Refractive index @ 1550 nm | 1.5 | 2.1 | 3.5 | 3.1 | 2.21 (o), 2.14 (e)b |
| Bending radius (μm) | 10000 --- 500 | 50 --- 150 | 5 --- 100 | 100 | 80 |
| Loss @ 1550 nm (dB/cm) | 0.003 --- 0.2 | 0.01 --- 0.2 | 0.1 --- 3 | 1.5 --- 3 | 0.027 |
| Fibre-to-chip coupling loss (dB) | Negligible | 0.5 | 2 | 3 | 0.5 |
| Nonlinear index (m2W−1) | 2.7 x 10−20 | 2.6 x 10−19 | 4.5 x 10−18 | 1.5 x 10−17 | 1.8 x 10−19 |
| Two-photon absorption (cm GW−1) | Negligible | Negligible | 0.25 | 60 | N/A |
| Modulation bandwidth and technology | N/A | 30 GHz with graphene 33 GHz with PZT |
30 GHz with free-carrier plasma dispersion | 55 GHz with QCSE-EAM | 175 GHz with Electro-optic modulation |
| Detector | Flip chip or 2-D Materials | Flip chip or 2-D Materials | Ge (50 GHz) | 40 GHz | N/A |
| Optical amplification | N/A | 30 dB (Erbium ion implant) | N/A | >20 dB (laser output) | N/A |
a
including nanowires and shallow etched ribs.
b
o/e denotes the ordinary and extraordinary axis of the LiNbO3 crystal; EAM, electro absorption modulator; PZT, lead zirconate titanate; N/A, not applicable.