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. 2023 Oct 5;6(19):18602–18613. doi: 10.1021/acsanm.3c04245

Figure 1.

Figure 1

GaAs/GaP superlattice nanowires. (a) Schematic illustration of the four-step growth process of a typical GaAs/GaP SL NW using chemical beam epitaxy; (b) SEM image of as-grown free-standing GaAs/GaP SL NWs grown on GaAs substrate; (c) TEM image of a typical SL NW of a nominal period 10 nm dispersed in a holey carbon grid investigated in this work; (d) the EDX mapping of SL NW with 4.8 nm period in false colors shows the distribution of elements along the length of the wire showing the presence of the GaAs/GaP SL segment. The elemental maps of one NW are represented as follows: green for As, blue for Ga, and red for P.