Figure 4.
Magnetoresistance (MR) of the fcc SnH4 at 180 GPa was measured in pulse magnetic fields. a) Dependence of the electrical resistance on the applied magnetic field at temperatures T > T C. A pronounced transition from a quadratic to a linear R(Hext) dependence is observed. b) Dependence of the sample resistance on the applied magnetic field over the entire temperature range. Due to the heating by eddy currents during the pulse, the sample temperature of 2.7 K cannot be considered reliably fixed. c) MR in low magnetic fields up to 16 T at temperatures 75 and 100 K. d) Linear part of the relative MR calculated for all temperature points starting from a field Bext of 20 T. e) Dependence of linear MR on temperature. f) Attempt to measure the Hall effect in Sn hydrides at temperatures 75 and 100 K.