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. 2023 Oct 15;16(20):6698. doi: 10.3390/ma16206698

Figure 3.

Figure 3

(a) One hundred direct current (DC) switching cycles of operation in the Pt/BN/TiN RRAM cell. (b) Representative endurance properties of RRAM devices based on the DC operation method. (c) Twenty DC cell−to−cell switching cycles of RRAM cells. (d) Retention properties of RRAM devices.