Table 5. Summary of the state-of-art mmWave power amplifiers.

P _SAT , Saturation Output Power; PAE _SAT , Power Added Efficiency at Saturation; PAE _OBO , Power Added Efficieny at -6dB back-off; SS Gain, Small-Signal Gain.

Ref.	Year	Technolo	f (GHz)	Topology	N.of stages	P SAT (dB)	PAE SAT (%)	PAE OBO (%)	SS Gain (dB)
176	2014	40 nm GaN HEMT	65-110	Single-ended	3	31.1	27	-	20
159	2018	100 nm GaN/Si HEMT	37-43	Combined	3	40	23	-	18
160	2012	150 nm GaAs pHEMT	17-35	Combined	1	22.5	30	-	10
161	2003	100 nm GaAs mHEMT	32	4 ways Combined	2	35	40	-	24
162	2015	100 nm GaAs pHEMT	71-76	8-way combined	4	28	13	-	26
163	2019	45 nm CMOS SOI	56-63	24-way combined	3	28.5	15	-	24
164	2015	40 nm CMOS	71-86	4-way combined	2	20.9	22	-	18.1
175	2018	130 nm SiGe HBT	20-28	Distributed	4	19	8	-	-
165	2020	45 nm CMOS SOI	24-40	Differential cascode	2	19	36.6	-	12
177	2018	50 nm GaAs mHEMT	65-125	Stacked	1	22	10.7	-	16.8
178	2015	130 nm SiGe BiCMOS	93	Class-E	2	17.7	40.4	-	15
179	2018	45 nm CMOS	23.5-41	Continuous class F/F-1	-	18.6	45.7	-	11.4
166	2019	45 nm CMOS SOI	27	Cascode, mixed-signal Doherty	2	23.3	40.1	33.1	19.1
167	2019	45 nm CMOS SOI	60	Differential Doherty	3	20.5	26	16.6	13
168	2019	150 nm GaAs pHEMTs	26.5-29.5	Combined Doherty	2	25	35	25	10
169	2019	100 nm GaN/Si HEMT	27.5-28.35	Single device Doherty	2	32	25	28	10
170	2015	40 nm CMOS	72	Doherty	-	21	13.6	7	18.5
171	2018	45 nm CMOS SOI	65	Doherty	-	19.4	27.5	20.1	12.5