Table 1.
Chip characteristics of the 2.1 μm F-DTI pixel.
| Characteristics | Data |
|---|---|
| Process | Pixel 65 nm/Logic 28 nm, stacked BSI |
| Power supply | 2.8 V/1.8 V/1.05 V |
| Si thickness | 3.0 μm |
| Pixel array (H × V) | 3840 × 2160 |
| Max frame rate | 36 fps @ 12 bit |
| FWC (LPD, SPD, in-pixel capacitor) | 10 ke-, 10 ke-, 210 ke- |
| Sensitivity | 32,000 e-/lux.sec (RCCB) |
| Sensitivity ratio | 10 |
| Conversion gain (HCG, LOFIC) | 185 μV/e-, 4.2 μV/e- |
| Read noise (HCG) | 0.83 e- |
| Single-exposure DR @ Tj 85 °C | 120 dB |
| Minimum SNR dip @ Tj 105 °C | 25 dB |
| Color filter array | RCCB (RGGB, RCCG, RYYCy support) |