Table 2. Halogen Surface Coverage on Hal(H)-Si(100) Substrates Treated with N-Hal-succinimidesa.
| halogenating agents | NCS (Cl) | NBS (Br) | NIS (I) |
|---|---|---|---|
| monohalogen surface coverage (%) | |||
| H–Si(100) | 145 | 88 | 62 |
| contact angle (deg) and contact angle hysteresis (deg) | |||
| Hal(H)–Si(100) | 72.5 ± 1.6 | 46.9 ± 0.6 | 26.2 ± 0.9 |
| 27.1 ± 0.1 | 24.0 ± 0.1 | 20.4 ± 0.1 | |
| Hal(OH)–Si(100) | 21.9 ± 0.4 | 24.4 ± 0.5 | 25.2 ± 0.7 |
| 17.9 ± 0.1 | 19.2 ± 0.1 | 17.1 ± 0.1 | |
| bare OH–Si(100) before halogenation | 20.7 ± 0.4 | ||
| bare H–Si(100) before halogenation | 67.0 ± 0.4 | ||
a
Water contact angle measurements of Hal(H)–Si(100) and Hal(OH)–Si(100) substrates and a bare OH–Si(100) substrate before the reaction.