. 2023 Nov 15;15(47):55139–55149. doi: 10.1021/acsami.3c13269

Table 3. Characterization of Al₂O₃ Thin Films Deposited onto Sample Surfaces after 20 ALD Cycles Included Thickness Calculations from ARXPS and XPS Measurements and AFM Roughness Measurements^a.

surface	thickness (nm) (based on XPS)	ALD growth rate (nm/cycle)	selectivity (%) (based on XPS)	AFM RMS roughness (nm)
OH–Si(100)	2.16	0.11	--	0.49
H-Si(100)	1.49	0.07	18.5	0.53
Cl(H)–Si(100)	1.16	0.06	30.0	0.21
Br(H)–Si(100)	1.23	0.06	27.6	0.76
I(H)–Si(100)	1.32	0.07	24.2	0.78

Selectivity is defined as a proportion between the surface concentration of Al atoms on the OH–Si(100) reference and the surface concentration of Al atoms on the Hal-Si(100) surfaces, all values found using XPS and normalized to the Si 2p signal.

Table 3. Characterization of Al2O3 Thin Films Deposited onto Sample Surfaces after 20 ALD Cycles Included Thickness Calculations from ARXPS and XPS Measurements and AFM Roughness Measurementsa.

Table 3. Characterization of Al₂O₃ Thin Films Deposited onto Sample Surfaces after 20 ALD Cycles Included Thickness Calculations from ARXPS and XPS Measurements and AFM Roughness Measurements^a.