Table 2.
The summary of characteristics of PeLEDs with in-situ crystallization patterning
| Fabrication method | Materials | Min pattern size (μm) | Max printing area (mm2) | Max EQE [%] | Max luminance (cd m−2) | References |
|---|---|---|---|---|---|---|
| Inkjet printing | CsPbBr3 | 125 | ~ 700 | 2.12 (G) | 2,500 | [44] |
| Inkjet printing | CsPbBr3 | 30 | 1,288 | 9.0 (G) | 3,640 (G) | [40] |
| kjet printing | CsPbX3 | 50 | 10 |
3.5 (R) 3.4 (G) 1.0 (B) |
267 (R) 956 (G) 146 (B) |
[22] |
| Inkjet printing | MAPbBr3 | 250 | – | 0.8 (G) | 10,227 (G) | [23] |
| Inkjet printing | CsPbBr3 | 50 | 10 | 10.1 (G) | 12,882 (G) | [42] |
| Inkjet printing | FAPbBr3 | 45 | 400 | 4.5 (G) | 12,738 (G) | [45] |
| Laser lithography | CsPbBr3 | 0.5 | – |
CE = 1.9 cd A−1 (G) |
18,390 (G) | [35] |
| Thermal evaporation |
CsPbBr3/ Cs4PbBr6 |
100 | 4,020 | 8.0 (G) | ~ 20,000 (G) | [33] |
| Thermal evaporation | CsPbBr3-TPPO a) | 20 | 7,994 | 16.4 (G) | ~ 10,000 (G) | [43] |
|
Photo lithography |
(PEABr)xCsPbBr3 | 20 | ~ 1.1 | 1.2 (G) | 13,043 (G) | [20] |
| E-beam lithography |
MAPbX3 (X = I, Br, Cl) |
20 | ~ 34 | ~ 0.1 (G) | ~ 1800 (G) | [36] |
a) TPPO: triphenylphosphine oxide