Fig. 3. Self-aligned device with longer channel length.

a Cross-sectional schematic of strain in the folded heterostructure. R here is the curvature radius. b, c TEM image (b) and corresponding EDS mapping (c) of the thicker folded heterostructure. d, e I_ds–V_gs transfer characteristics of thicker self-aligned device under negative bias region (d) and positive bias region (e). f Corresponding I_ds–V_ds output characteristics of the thicker self-aligned device.