. 2023 Nov 12;11(1):2305745. doi: 10.1002/advs.202305745

Table 1.

Photophysical and electrochemical parameters for Au(I) complexes.

	λ _abs [nm (ε, 10³ m ⁻¹ cm⁻¹)] ^a)	λ _em [nm] ^b)	τ _obs [µs] ^c)	Φ ^d)	E _ox (V vs SCE) ^e)	E _red (V vs SCE) ^f)	k _r ^TADF (10⁵ s⁻¹) ^g)	k _nr (10⁵ s⁻¹) ^h)	ΔE _S1−T1 (meV) ⁱ⁾	k _ISC (10⁸ s⁻¹) ^j)	k _rISC (10⁸ s⁻¹) ^k)
[Au(^DippPZI)(ACD)]	462 (7.2)	533	0.32	0.84	1.05	−1.49	26	5.0	40	21	6.6
[Au(^DippPZI)(Cz)]	475 (9.8)	553	0.32	0.87	0.84	−1.62	27	2.4	55	22	4.5
[Au(^DippPZI)(DPA)]	549 (6.6)	663	0.30	0.26	0.50	−1.58	8.7	25	49	7.9	1.5
[Au(^DippPZI)(DPAC)]	560 (9.4)	666	0.26	0.22	0.54	−1.54	8.5	30	64	25	2.6
[Au(^DippPZI)(DMAC)]	590 (6.2)	705	0.16	0.10	0.39	−1.54	6.3	56	52	3.8	4.7
[Au(^DippPZI)(PXZ)]	619 (5.6)	750	0.019	N.D. ^l)	0.25	−1.49	N.D. ^l)	N.D. ^l)	N.D. ^l)	N.D. ^l)	N.D. ^l)

^{^a)}

Absorption peak wavelengths recorded for 10 µm Au(I) complex in deaerated toluene at 298 K;

^{^b)}

Photoluminescence peak wavelengths recorded for Zeonex thin films doped with 5 wt % Au(I) complexes (quartz substrates) at 298 K;

^{^c)}

Weighted average photoluminescence lifetime determined through triexponential decay fits of the photoluminescence decay traces monitored at emission peak wavelengths of Zeonex thin films doped with 5 wt % Au(I) complexes (quartz substrates) after pulsed laser excitation under 377 nm (time resolution: 32 ps);

^{^d)}

Photoluminescence quantum yields of Zeonex thin films doped with 5 wt. % Au(I) complexes (quartz substrates) determined absolutely by integrating over a sphere at 298 K;

^{^e)}

Oxidation;

^{^f)}

reduction potentials determined by cyclic and differential pulse voltammetry for anhydrous THF containing 2.0 mm samples and 0.10 m TBAPF₆. A Pt working and a Pt counter electrodes, and an Ag/AgNO₃ pseudo reference electrode were employed. Scan rate = 0.10 V s⁻¹ (cyclic voltammetry) and 0.004 V s⁻¹ (differential pulse voltammetry);

^{^g)}

Radiative decay rate of TADF emission, k _r ^TADF = Φ /τ _obs;

^{^h)}

Nonradiative decay rate, k _nr = (1 − Φ) /τ _obs;

^ⁱ⁾

Energy difference between the S₁ and T₁ states determined through Boltzmann fitting of variable‐temperature τ _obs values (see Figures S10 and S11, Supporting Information);

^{^j)}

Rate constant for intersystem crossing computed from Equation S5 (Supporting Information);

^{^k)}

Rate constant for reverse intersystem crossing computed from Equation S4 (Supporting Information);

^{^l)}

Not determined due to weak emission.