. 2024 Jan 8;14(3):1875–1887. doi: 10.1039/d3ra06731a

Spectral white-line position, absorption edge energy selected at the fraction (half) of the edge step, and the deduced oxidation states for the Bi reference standards, the thin film and bulk samples of Bi₂Te₃, also for FDMNES theoretically calculated XANES spectrum at Bi L_III edge for Bi₂Te₃.

Sample	White-line position (eV) ± 0.2	E ₀ (eV); selected at the half-height of the edge step ± 2	Oxidation state of Bi
Bulk Bi₂Te₃	13 444.81	13 418.9	Bi³⁺
Thin film Bi₂Te₃	13 438.39	13 418.7	Bi³⁺
γ-Bi₂O₃	13 436.6	13 419.3	Bi³⁺
β-Bi₂O₃	13 447.0	13 426.6	Bi³⁺
Bi(OH)₃	13 440.49	13 415.4	Bi³⁺
Bi₂O₄	13 452.6	13 432.6	Bi⁴⁺
Calculated Bi₂Te₃	13 441.8	13 419.4	Bi³⁺

Spectral white-line position, absorption edge energy selected at the fraction (half) of the edge step, and the deduced oxidation states for the Bi reference standards, the thin film and bulk samples of Bi2Te3, also for FDMNES theoretically calculated XANES spectrum at Bi LIII edge for Bi2Te3.