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. 2024 Jan 4;10(1):e24107. doi: 10.1016/j.heliyon.2024.e24107

Table 2.

Parameter of interface defects used in simulations.

Parameters GO/CsSnI3 and CsSnI3/ZnMgO
Type of defect Neutral
Capture cross section of Electrons (cm2) 1 × 10−19
Capture cross section of Holes (cm2) 1 × 10−19
Energy distributions single
Reference for def. energy level Above the highest EV
Energy with respect to reference (eV) 0.6
Total density (cm−2) 1 × 109