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. 2024 Jan 12;7(2):2343–2351. doi: 10.1021/acsanm.3c05770

Figure 2.

Figure 2

(a) High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) image of a hexagonal SiGe nanowire (Si0.2Ge0.8, length ≈ 1.7 μm, diameter ≈ 60 nm, AR ≈ 27, pitch ≈ 2 μm, see Table 1) coated with approximately 22 nm PEALD Al2O3. Note that to enable this TEM image a thinner nanowire was used than for the PL measurements; see details in Table 1. (b) Close-up of the top part of the nanowire. (c) Close-up of the lowest part of the nanowire. (d) Arrhenius representation of the photoluminescence intensity as a function of inverse temperature for hex-Si0.23Ge0.77 nanowires without and with Al2O3 passivation film. The integrated PL intensities are obtained for an excitation density of 6.8 kW/cm2 and normalized to their respective intensity at 4 K. The data has been fitted with the Arrhenius equation (solid lines through the data, parameters listed in Section 2 in the Supporting Information).