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. 2024 Jan 31;15:923. doi: 10.1038/s41467-024-45092-7

Fig. 2. Phase, structural, and compositional information of as-fabricated Te-doped Ag2Se thin films.

Fig. 2

a X-ray diffraction (XRD) patterns of Ag2Se thin films with different Te concentrations x (x = 0, 0.7, 1.3, 1.9, 2.6, 3.2, and 3.8 at.%) with 2θ ranges from 20° to 55°. b Determined orientation factors F(00l) of the films. Pole files of Ag2Se thin films with 3.2 at.% Te along the (c) (002) and (d) (013) directions. e Scanning electron microscopy (SEM) and corresponding electron back-scattered diffraction (EBSD) images of Ag2Se thin films with 3.2 at.% Te from the top view. The orientation information is provided for reference. f Energy dispersive spectroscopy (EDS) maps of Ag2Se thin films with 3.2 at.% Te for overlap and individual Ag, Se, and Te elements.