MAPbI3
|
MoS2
|
Direct production of MoS2 nanosheets on ITO substrate |
Enhanced interfacial charge transfer capabilities, stability, and overall performance |
50
|
MAPbI3
|
MoS2
|
Used as HTL |
Versatility of MoS2 as both ETL and HTL |
52
|
MAPbI3
|
MoS2
|
Inverted p–i–n heterojunction planar PSC |
Utilization of MoS2 as HTL |
54
|
MAPbI3
|
Spiro-OMeTAD |
Incorporation of benzoic acid |
Accelerated oxidation and improved hole-transmitting properties |
61
|
CsPbI2Br |
Spiro-OMeTAD |
Fluorinated spiro-OMeTAD without dopants |
High PCE and exceptional longevity |
62
|
MAPbI3
|
ZnO |
Ultrasonic bath to produce ZnO nanoparticles in different solvents |
Superior performance due to excellent MAPbI3 surface coverage and low defect density |
66
|
MAPbI3
|
ZnSnO |
Doping with silicon |
Improved charge extraction and conduction capabilities |
67
|
MAPbI3
|
TiO2
|
Lithium (Li) doping of TiO2
|
Enhanced conductivity and reduced solar power loss |
73
|
MAPbI3
|
TiO2
|
Sol–gel production process with varying TiO2 concentrations |
Enhanced efficiency of low-temperature solar panels |
74
|
MAPbI3
|
TiO2
|
MgTiO3-coated TiO2 mesoporous scaffold layers |
Improved photovoltaic performance and durability |
75
|
MAPbI3
|
In2O3
|
Synthesis of stable In2O3 films at low temperatures |
Enhanced electron extraction and charge transfer |
78
|
MAPbI3
|
Cu2O/SiO2
|
RF magnetron sputtering |
Enhanced PCE, reduced charge carrier recombination |
79
|
MAPbI3
|
TiO2
|
Introduction of a thin m-TiO2 layer at the interface |
Superior performance and low hysteresis coefficient |
80
|
MAPbI3
|
MFIL |
Multifunctional interface layer (MFIL) technique |
Enhanced efficiency and durability |
81
|
MAPbI3
|
ZnO |
Production of well-ordered ZnO nanorods on FTO substrate |
Improved electron transportation and increased contact area |
82
|