| MAPbBr3 and MAPbI3
|
First used in DSSCs as sensitizers |
Pioneered the use of perovskite materials in DSSCs |
36
|
| Pb-halide-based perovskites |
Incorporation of I and Br ions |
Transformed the field of PVs; influenced photocurrent and photovoltage |
36
|
| Pb-based perovskites |
Direct bandgap (1.6 eV) semiconductor |
Nearly ideal Shockley–Queisser limit for single-junction solar cells (1.43 eV) |
76
|
| MAPbI3
|
Planar structured single crystal device with fullerene derivatives |
Achieved a PCE of 12% |
79
|
| MAPbI3 lateral structure |
Surface treated with MAI |
Improved Voc, FF, and achieved a PCE of 11% |
82
|
| MAPbBr3
|
Bromide-based perovskite |
Higher Voc compared to iodide-based perovskite solar cells |
85
|
| Single crystal OIHP |
Superior characteristics compared to polycrystalline |
Rapid increase in PCE from 6.53% to 22.8% |
89
|
| Sn and Ge mixtures |
Reduction of Pb concentrations |
Predicted decrease in toxicity |
91
|
| Physical Pb reduction |
Strategy to use less Pb in the device |
Maintain high PCE while reducing Pb consumption |
92
|
