| Interfacial modification |
Device encapsulation, inverted orientation |
Enhanced durability |
157, 176 and 177
|
| Intrinsic alteration |
Reducing moisture–corrosion |
Increased stability of perovskites |
158 and 178
|
| Intergranular interface optimization |
Enhancing crystallinity |
Better charge separation and transportation; however, higher defect density |
160–163, 179 and 180
|
| Polymer-based PSCs |
Use of PEO, PMMA, PEI, PVP |
Enhanced resilience and PCE; however, may reduce the crystallinity or photoelectric property of the perovskite |
164–166 and 181–185
|
| Dendritic polymers |
Use of dendritic polymers |
Enhanced stability and effectiveness |
167 and 186
|
| PAMAM dendrimers |
Polyamidoamine (PAMAM) dendrimers |
Improved PCE to 42.60%, enhanced perovskite intergranular interactions |
168
|
| NPE buffer layers |
Nonconjugated polymer electrolytes (NPEs) |
Improved PCE in both N–I–P (14.71%) and P–I–N (13.79%) configurations |
169
|
| PEDOT:PSS HTLs |
CuSCN-modified PEDOT:PSS HTL |
Improved PCE to 15.30%, exceptional longevity. However PEDOT:PSS is acidic in nature |
174
|
| NPB buffer layer |
NPB as a buffer layer |
Reduced electron–hole recombination, improved PCE to 18.40% |
175
|
