Figure 2.

Photoelectric detection performance of Ti₃C₂T _x /PbS CQDs NIR photodiode. a) Semilog J‐V curves of the device in the dark and under NIR (940 nm) illumination at intensities from 0.2 µW cm ^{− 2} to 2 W cm ^{− 2}. b) Linear dependence of generated photocurrents of the Ti₃C₂T _x /PbS CQDs NIR photodiode on the utilized 940 nm light intensity. c–e) EQE and responsivity spectra (c), transient response (d), and response bandwidth (e) of the Ti₃C₂T _x /PbS CQDs NIR photodiode at zero voltage bias. f) Measured current noise of the Ti₃C₂T _x /PbS CQDs NIR photodiode as a function of frequency at zero voltage bias. g) Specific detectivity (D^* ) and bandwidth statistics of the Ti₃C₂T _x /PbS CQDs NIR photodiode with typical PbS CQDs photodetectors reported in the literature.