Figure 3.

Working mechanism of Ti₃C₂T _x /PbS CQDs NIR photodiode. a–c) UPS characterization of a) PbS‐EDT, b) PbS‐I, and c) Ti₃C₂T _x , respectively. d) Energy band diagrams of the ZnO, PbS‐I, PbS‐EDT, and Ti₃C₂T _x before contact formation. e) Energy level alignment in the thermal‐equilibrium state for Ti₃C₂T _x /PbS CQDs NIR photodiode. Comparison of f) dark current density and g) EQE spectra between experimental results and the theoretical model developed using Sentaurus TCAD. h) Normalized responsivity and open‐circuit voltage of PbS‐I and PbS‐EDT layers under 0.1 W cm⁻² illumination with varying trap concentrations.