ASIC |
Application-specific integrated circuits |
CCD |
Charge-coupled device |
CCE |
Charge collection efficiency |
CMOS |
Complementary metal oxide semiconductor |
ENC |
Equivalent noise charge |
EW |
Entrance window |
FBK |
Fondazione Bruno Kessler |
GCD |
Gate-controlled diode |
IL |
Inactive layer |
iLGAD |
Inverse low-gain avalanche diodes |
IQE |
Internal quantum efficiency |
LGAD |
Low-gain avalanche diodes |
OSA |
Order-sorting aperture |
PSI |
Paul Scherrer Institut |
PTB |
Physikalish-Technische Bundesanstalt |
QE |
Quantum efficiency |
SHR |
Shockley–Read–Hall |
SIM |
Surfaces/Interfaces:Microscopy |
SLS |
Swiss Light Source |
SNR |
Signal-to-noise ratio |
SwissFEL |
Swiss X-ray Free-Electron Laser |