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. 2024 Jan 31;24(3):942. doi: 10.3390/s24030942
ASIC Application-specific integrated circuits
CCD Charge-coupled device
CCE Charge collection efficiency
CMOS Complementary metal oxide semiconductor
ENC Equivalent noise charge
EW Entrance window
FBK Fondazione Bruno Kessler
GCD Gate-controlled diode
IL Inactive layer
iLGAD Inverse low-gain avalanche diodes
IQE Internal quantum efficiency
LGAD Low-gain avalanche diodes
OSA Order-sorting aperture
PSI Paul Scherrer Institut
PTB Physikalish-Technische Bundesanstalt
QE Quantum efficiency
SHR Shockley–Read–Hall
SIM Surfaces/Interfaces:Microscopy
SLS Swiss Light Source
SNR Signal-to-noise ratio
SwissFEL Swiss X-ray Free-Electron Laser