Figure 2.
Previously reported top-down fabrication process for vertically stacked silicon nanowires: (a) chemical vapor deposition of TEOS oxide; (b) photolithography of mask for silicon nanowires; (c) etching silicon oxide; (d) silicon deep reactive ion etching using BOSCH process; (e) removal of residual photoresist using plasma ashing; (f) thermal oxidation to make the silicon nanowires suspended.