Table 2.
Performance metrics of 2D material-based artificial neurons based on volatile memristors
| Functional 2D material | Type | Fabrication method | Device dimension (µm2) | Mechanism | Threshold voltage (V) | Switching ratio | Endurance | Refs |
|---|---|---|---|---|---|---|---|---|
| MoS2 | Memristor | CVD | 4 | Conductive filamentary formation | 0.35 ~ 0.4 | 106 | 5 × 106 (PVS) | [117] |
| MoS2 | Memristor | CVD | ~ 1 | Conductive filamentary formation | 1.2 | 104 | 50 (PVS) | [103] |
| HfSe2-xOy | Memristor | Exfoliation | ~ 10 | Conductive filamentary formation | 0.542 | 106 | 100 (DC sweep) | [118] |
| MoS2 | Memristor | CVD | ~ 1 | Migration of oxygen ions | NA | ~ 103 | NA | [119] |
| MoS2 | Memristor | CVD | 0.01 ~ 1 | Conductive filamentary formation | ~ 0.1 | < 10 | 40 | [120] |