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. 2024 Feb 9;10(4):e25429. doi: 10.1016/j.heliyon.2024.e25429

Table 4.

The hopping conduction parameters and the time relaxation of the devices at 0 V.

Bias voltage (V) σdc (S cm−1) A (S m−1rad−1) s fH (kHz) τH (ms) fo (Khz) τ0 (ms)
Structure: ITO/P1/Al
0 1.710–4 1.210–4 0. 75361 1.6 0.1 4.355 3.6
Structure: ITO/P2/Al
0 7.0339E−7 7.5212E−9 0.76473 365 0.43 0.0159 10.1
Structure: ITO/P3/Al
0 8.7015E−9 4.9618E−9 0.79764 24.8 0.0389 0,01416 11,24