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. 2024 Feb 19;14(4):383. doi: 10.3390/nano14040383
ADGG Asymmetric Dual Grating Gates
BG Back Gate
CNP Charge Neutrality Point
D drain
EBL Electron Beam Lithography
EM Electromagnetic
FET Field Effect Transistor
FWHM full width at half maximum
S Source
SNR Signal to Noise Ratio
TG Top Gate
THz Terahertz
vdW van der Waals