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. 2024 Jan 30;15(2):205. doi: 10.3390/mi15020205
BEOL Back-End of the Line
BTI Bias Temperature Instability
EDMOS Extended-Drain Metal Oxide Semiconductor
HBD Hard Breakdown
HCD Hot-Carrier Damage
HH Hot Hole
HKMG High-K Metal Gate
II Impact Ionization
LOCOS Locally Oxidized Silicon
MOSFET Metal-Oxide-Semiconductor Field Effect Transistor
PBTI Positive Bias Temperature Instability
QS Quasi-Static
STI Shallow Trench Isolation
SPAD Single Photon Avalanche Diode
FDSOI Fully Depleted Silicon on Insulator
TSV Through Silicon Via