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. 2024 Feb 13;15(2):269. doi: 10.3390/mi15020269

Figure 4.

Figure 4

Comparison of NBTI-induced Vt shift (ΔVt) as a function of absolute stress gate voltage (|VGS|) in GAA NS devices fabricated on (100) vs. (110) surface orientations, showing higher NBTI degradation in (110) surface orientation [14]. Reprinted/adapted with permission from IEEE Proceedings of the 2020 International Reliability Physics Symposium.