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. 2024 Feb 13;15(2):269. doi: 10.3390/mi15020269

Figure 7.

Figure 7

Comparison of HCD (each data point is the mean value of more than seven devices stressed at the same condition) in GAA NS nFETs with (100) vs. (110) top surface orientations [18]. ΔIdsat% is defined as (Idsat0 – Idsat)/Idsat0 × 100%, whereas Idsat0 is the initial saturation drain current. Idsat is the saturation drain current during stress.