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. 2024 Feb 13;15(2):269. doi: 10.3390/mi15020269

Figure 19.

Figure 19

Cross-sectional schematics after key steps in the special process flow in [11] to evaluate inner spacer TDDB: (a) after channel release, (b) after Si trimming, (c) complete channel oxidation, and (d) after HKMG process. Reprinted/adapted with permission from IEEE Proceedings of the 2020 International Reliability Physics Symposium.