Figure 20.

Time to failures of Gox TDDB in NS nFETs and inner spacer TDDB projection to a target failure rate, and total Gox area or inner spacer run length, with the T63%, VAE, and β reported in [11,44]. Due to the shallower beta and lower VAE, the inner spacer of NS is likely to fail sooner than gate oxide at maximum operating voltage and the required failure rate for standard semiconductor chip operation. Adapted with permission from IEEE Proceedings of the 2020 and 2021 International Reliability Physics Symposium.