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. 2024 Feb 13;15(2):269. doi: 10.3390/mi15020269

Table 1.

Summary of key architectural elements of NS and their impact on device reliability. BT. stands for better than; * NIE stands for no impact expected; and ** NR is short for not reported. *** Expected from the corner field and surface orientation impact at different sheet widths.

Mechanisms PBTI NBTI HCI SHE Gox TDDB MOL TDDB
Surface orientation NIE * Yes Yes NIE * Yes NIE *
(100) BT. (110)? [10] [10,14] [18] [43]
Tsi: 9 nm and below Yes Yes Yes Worse Yes NR **
Thicker BT. Thinner? [10] [10] [18,23] [38] [22]
Wsheet NIE * Yes Worse Worse Yes *** NR **
Wider BT. Narrow? [10,14] [12,18,24] [12,25,36] [10,43]