Table 2.
Key modeling parameters for BTI and HCI reliability in GAA NS [10,14,18,36]. * Extracted from power law fitting of HCD vs. stress voltage curves in NS with (100) top surface orientation in Figure 4.
| Mechanisms | References | Temp | VAE from Power Law Fit | Time Exponent (n) | Activation Energy (Ea) |
|---|---|---|---|---|---|
| PBTI | [10] | 125 °C | ~7.4 | ~0.20 | 0.105 eV |
| [36] | 25~125 °C | 8.61~10.18 | - | - | |
| NBTI | [10] | 125 °C | ~5.5 | ~0.25 | 0.18 eV |
| [14] | ~5.52 for (100) | 0.15 eV for (100) | |||
| ~4.40 for (110) | 0.13 eV for (110) | ||||
| nFET Mid-Vg HCI | [18] | 25 °C | ~13.2 * | 0.25~0.4 | 0.07 eV |
| nFET High-Vg HCI | [18] | 25 °C | ~10.3 * | 0.07 eV | |
| pFET Mid-Vg HCI | [18] | 25 °C | ~8.8 * | - | - |
| pFET High-Vg HCI | [18] | 25 °C | ~11.6 * | - | 0.17 eV |