Skip to main content
. 2024 Feb 19;14(4):386. doi: 10.3390/nano14040386
2D Two Dimensional
3D Three Dimensional
ALD Atomic Layer Deposition
AM Amplitude Modulation
BN Boron Nitride
CFET Complementary Field-Effect Transistor
CGP Contacted Gate Pitch
CMOS Complementary Metal–Metal–Semiconductor
CPP Contact-Poly Pitch
DCE Dichloroethane
DFT Density Functional Theory
FET Field-Effect Transistor
FinFET Fin Field-Effect Transistor
FLP Fermi-Level Pinning
FN Fowler–Nordheim
GAA Gate-All-Around
GR Generation and Recombination
HOMO Highest-Occupied Molecular Orbital
IC Integrated Circuit
ITRS International Technology Roadmap for Semiconductors
I–V Current–Voltage (Characteristics)
LDOS Local Density of States
LED Light-Emitting Diode
LUMO Lowest Unoccupied Molecular Orbital
MIGS Metal-Induced Gap States
MIM Metal–Insulator–Metal
MIS Metal–Insulator–Semiconductor
MOS Metal-Oxide–Metal–Semiconductor
PDMS Polydimethylsiloxane
PF Poole–Frenkel (emission)
PLDOS Projected Local Density of States
PMMA Polymethylmethacrylate
SCTD Spontaneous Charge Transfer Doping
STM Scanning Tunneling Microscopy
STS Scanning Tunneling Spectroscopy
TMD Transition Metal Dichalcogenide
TSV Through Silicon Via