2D |
Two Dimensional |
3D |
Three Dimensional |
ALD |
Atomic Layer Deposition |
AM |
Amplitude Modulation |
BN |
Boron Nitride |
CFET |
Complementary Field-Effect Transistor |
CGP |
Contacted Gate Pitch |
CMOS |
Complementary Metal–Metal–Semiconductor |
CPP |
Contact-Poly Pitch |
DCE |
Dichloroethane |
DFT |
Density Functional Theory |
FET |
Field-Effect Transistor |
FinFET |
Fin Field-Effect Transistor |
FLP |
Fermi-Level Pinning |
FN |
Fowler–Nordheim |
GAA |
Gate-All-Around |
GR |
Generation and Recombination |
HOMO |
Highest-Occupied Molecular Orbital |
IC |
Integrated Circuit |
ITRS |
International Technology Roadmap for Semiconductors |
I–V |
Current–Voltage (Characteristics) |
LDOS |
Local Density of States |
LED |
Light-Emitting Diode |
LUMO |
Lowest Unoccupied Molecular Orbital |
MIGS |
Metal-Induced Gap States |
MIM |
Metal–Insulator–Metal |
MIS |
Metal–Insulator–Semiconductor |
MOS |
Metal-Oxide–Metal–Semiconductor |
PDMS |
Polydimethylsiloxane |
PF |
Poole–Frenkel (emission) |
PLDOS |
Projected Local Density of States |
PMMA |
Polymethylmethacrylate |
SCTD |
Spontaneous Charge Transfer Doping |
STM |
Scanning Tunneling Microscopy |
STS |
Scanning Tunneling Spectroscopy |
TMD |
Transition Metal Dichalcogenide |
TSV |
Through Silicon Via |