| 2D | Two Dimensional |
| 3D | Three Dimensional |
| ALD | Atomic Layer Deposition |
| AM | Amplitude Modulation |
| BN | Boron Nitride |
| CFET | Complementary Field-Effect Transistor |
| CGP | Contacted Gate Pitch |
| CMOS | Complementary Metal–Metal–Semiconductor |
| CPP | Contact-Poly Pitch |
| DCE | Dichloroethane |
| DFT | Density Functional Theory |
| FET | Field-Effect Transistor |
| FinFET | Fin Field-Effect Transistor |
| FLP | Fermi-Level Pinning |
| FN | Fowler–Nordheim |
| GAA | Gate-All-Around |
| GR | Generation and Recombination |
| HOMO | Highest-Occupied Molecular Orbital |
| IC | Integrated Circuit |
| ITRS | International Technology Roadmap for Semiconductors |
| I–V | Current–Voltage (Characteristics) |
| LDOS | Local Density of States |
| LED | Light-Emitting Diode |
| LUMO | Lowest Unoccupied Molecular Orbital |
| MIGS | Metal-Induced Gap States |
| MIM | Metal–Insulator–Metal |
| MIS | Metal–Insulator–Semiconductor |
| MOS | Metal-Oxide–Metal–Semiconductor |
| PDMS | Polydimethylsiloxane |
| PF | Poole–Frenkel (emission) |
| PLDOS | Projected Local Density of States |
| PMMA | Polymethylmethacrylate |
| SCTD | Spontaneous Charge Transfer Doping |
| STM | Scanning Tunneling Microscopy |
| STS | Scanning Tunneling Spectroscopy |
| TMD | Transition Metal Dichalcogenide |
| TSV | Through Silicon Via |