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. 2020 Mar 23;5(4):1233–1242. doi: 10.1021/acsenergylett.0c00068

Figure 5.

Figure 5

Simulated CZ PVV contours for multiple configurations of a 3TT device based on GaInP and Si (under AM1.5G illumination): (a) GaInP/s/nuIBC, (b) GaInP/r/nuIBC, (c) GaInP/s/pbIBC, and (d) GaInP/r/pbIBC.