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. 2020 Mar 23;5(4):1233–1242. doi: 10.1021/acsenergylett.0c00068

Figure 6.

Figure 6

Simulated CZ PVV contours for a subset of configurations of a 3TT device based on GaAs and Si (under AM1.5G illumination): (a) GaAs/r/nuIBC and (b) GaAs/r/pbIBC.