Table 2.
The photovoltaic parametersa of the optimized All-PSC devices based on PBDB-TF0.25:PY-BTz and PBDB-TF0.25:PY-2T under the illumination of AM 1.5 G, 100 mW cm−2
| Acceptor | Method | Jsc (mA/cm2) | VOC (V) | Fill factor | PCEave (%) | PCEmax (%) | µh/µe [10−4 cm2 V−1 s−1] |
|---|---|---|---|---|---|---|---|
| PY-2T | Spin-coating | 19.00 ± 0.18 | 0.922 ± 0.003 | 0.559 ± 0.006 | 9.77 ± 0.07 | 9.85 | 3.5 ± 0.5/1.8 ± 0.2 |
| PY-BTz | Spin-coating | 25.8 ± 0.7 | 0.917 ± 0.005 | 0.67 ± 0.02 | 16.0 ± 0.2 | 16.4 | 4.2 ± 0.5/3.8 ± 0.4 |
| PY-BTz | Solution-shearing in ambient | 22.2 ± 1.0 | 0.901 ± 0.006 | 0.693 ± 0.007 | 13.9 ± 0.6 | 14.7 | n.d. |
aThe average values with standard deviations were obtained 10 samples (for the error analysis see Supplementary Fig. 19). Device structure of ITO/ZnO/PFNBr/Active-layer/MoO3/Ag. Device area: 4 mm2.