Fig. 1. Uniform RS in the Ag-IPS memristor.
(A) Atomic structure of monolayer IPS showing the intrinsic structural and lattice vacancies. (B and C) I-V curves during 100 cycles and the corresponding histogram of the set and reset voltage distributions of IPS (~40 nm) memristor. (D) Comparison of the set voltage variation among IPS, Ag-IPS, and reported 2D material– and oxide-based memristors. (E and F) Perspective view from the c axis of multilayer (E) pristine undoped IPS showing intrinsic structural channels with lattice defects and (F) Ag-doped IPS with the intrinsic vacancy occupied by Ag. (G and H) I-V curves during 100 cycles and the corresponding histogram of the set and reset voltage distributions of Ag-IPS (~40 nm) memristor. (I) Resistance and on/off ratio versus DC endurance cycles of the Ag-IPS device. (J) Variation comparison of the HRS resistance among the Ag-IPS and oxide-based memristors. The 2D material–based memristors are not shown here because there are rare articles reporting Cv of the resistances. Our Ag-IPS memristor has ultrahigh HRS resistance and the lowest variability. (K and L) Radar graph comparing the device metrics of the Ag-IPS memristor with (K) oxide- and (L) 2D material–based memristors. Our device shows the best overall performance. CV, coefficient of variation; CV = σ/μ, where σ and μ are the SD and mean value of the resistance, respectively. For detailed references, please see tables S1 and S2 [marked in blue for (D), marked in green for (J), and marked in purple for (K) and (L)]. Before the repeated I-V cycles, electroforming processes are required (fig. S2). The size of the IPS and Ag-IPS memristors is 2 × 2 μm2.