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. 2024 Mar 13;10(11):eadk9474. doi: 10.1126/sciadv.adk9474

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Fig. 2. — (A to F) Nonvolatile RS under different operation currents in (A to C) IPS memristors and (D to F) Ag-IPS memristors with different thicknesses. The red and blue curves mark the volatile RS and nonvolatile RS, respectively. All devices have a size of 2 × 2 μm². (G to I) Repeated RS in Ag-IPS memristors at low operation currents of (G) 1 pA and (H) 10 pA, along with (I) the corresponding distribution of the operation voltage. (J) Retention property of the Ag-IPS memristor under different operation currents (read at 0.05 V). (K) Benchmark plot comparing the operation current and on/off ratio among the Ag-IPS, 2D material–based, and oxide-based memristors. Most reported memristors have microampere-level operation currents and on/off ratios below 10⁶. The Ag-IPS memristor stands out with the highest on/off ratio (>10⁹) and lowest operation current of 1 pA. For detailed references, please see tables S1 and S2 (marked in yellow).