Fig. 4. Experimental demonstration of Boolean logic operations in the Ag-IPS memristor.

(A) Logic operations by a single device. The top (Ag) and bottom (Au) electrodes of the device are marked with In1 and In2, where logic operations In1In2 include 00, 01, 10, and 11. Here, 0 represents a low potential (0 V) and 1 represents a high potential (2 V). For example, 01 means applying 0 and 2 V to the terminals In1 and In2, respectively. (B) The truth tables show the operation sequence to the logic function p NIMP q. (C to J) Experimental demonstration of the p NIMP q logic operation and the corresponding distribution of the output current and initial current opposite to the output logic. For example, the current of state 0 in (G) is extracted from the output current after logic operations in (C), while the opposite logic, i.e., state 1, is obtained from the initialization step. The output currents of the four experiments are clearly distinguished from each opposite logic current. (K) The truth table of 14 fundamental Boolean logic functions was obtained from our experiments.